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Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess
M V Yakushev, J Márquez-Prieto, I Forbes, P R Edwards, V D Zhivulko, A V Mudryi, J Krustok and R W Martin

 

Abstract
Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

 

Journal of Physics D: Applied Physics, Volume 48, Number 47
doi: 10.1088/0022-3727/48/47/475109